DIODES

ZXMN3A04KTC

Datasheet

N-Channel MOSFET, 30V, 18.4A, 20mR Rds On, DPAK

Diodes

ZXMN3A04KTC

Name: ZXMN3A04KTC Diodes
Brand: Diodes
SKU: ZXMN3A04KTC

N-Channel MOSFET, 30V, 18.4A, 20mR Rds On, DPAK

N-channel MOSFET with 30V drain-source voltage (Vdss) and 18.4A continuous drain current (ID). Features low 20mΩ drain-source on-resistance (Rds On Max) and 2.15W power dissipation. This surface-mount device, packaged in DPAK-3 (TO-252-3), offers fast switching with turn-on delay of 5.2ns and fall time of 20.2ns. It operates within a temperature range of -55°C to 150°C and is RoHS and REACH SVHC compliant.

PackageTO-252-3

Current Rating18.4A

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Diodes ZXMN3A04KTC technical specifications.

General

Package/Case	TO-252-3
Continuous Drain Current (ID)	18.4A
Current Rating	18.4A
Drain to Source Resistance	30mR
Drain to Source Voltage (Vdss)	30V
Drain-source On Resistance-Max	20mR
Fall Time	20.2ns
Gate to Source Voltage (Vgs)	20V
Height	2.39mm
Input Capacitance	1.89nF
Lead Free	Lead Free
Length	6.73mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2.15W
Mount	Surface Mount
Number of Channels	1
Package Quantity	2500
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	4.3W
Radiation Hardening	No
Rds On Max	20mR
Reach SVHC Compliant	Yes
RoHS Compliant	Yes
Turn-Off Delay Time	38.1ns
Turn-On Delay Time	5.2ns
DC Rated Voltage	30V
Weight	0.139332oz
Width	6.22mm