N-channel MOSFET with 30V drain-source voltage (Vdss) and 18.4A continuous drain current (ID). Features low 20mΩ drain-source on-resistance (Rds On Max) and 2.15W power dissipation. This surface-mount device, packaged in DPAK-3 (TO-252-3), offers fast switching with turn-on delay of 5.2ns and fall time of 20.2ns. It operates within a temperature range of -55°C to 150°C and is RoHS and REACH SVHC compliant.
PackageTO-252-3
Current Rating18.4A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes ZXMN3A04KTC technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
18.4A
Current Rating
18.4A
Drain to Source Resistance
30mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
20mR
Fall Time
20.2ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
1.89nF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.15W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
4.3W
Radiation Hardening
No
Rds On Max
20mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
38.1ns
Turn-On Delay Time
5.2ns
DC Rated Voltage
30V
Weight
0.139332oz
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXMN3A04KTC Datasheet
Download the complete datasheet for Diodes ZXMN3A04KTC to view detailed technical specifications.
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