N-Channel Silicon Metal-Oxide Semiconductor FET for small signal applications. Features a 30V Drain-to-Source Voltage (Vdss) and a maximum continuous drain current of 3.9A. Offers a low Drain-source On Resistance (Rds On) of 65mR. Packaged in a SOT-23-3 surface mount case with a 1.02mm height, 3.04mm length, and 1.4mm width. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.5W.
PackageSOT-23-3
Current Rating3.5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes ZXMN3A14FTA technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
3.9A
Current Rating
3.5A
Drain to Source Resistance
95mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
65mR
Fall Time
5.3ns
Gate to Source Voltage (Vgs)
20V
Height
1.02mm
Input Capacitance
448pF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.5W
Radiation Hardening
No
Rds On Max
65mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
13.1ns
Turn-On Delay Time
2.4ns
DC Rated Voltage
30V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXMN3A14FTA Datasheet
Download the complete datasheet for Diodes ZXMN3A14FTA to view detailed technical specifications.
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