ZXMN3A14FTA

Datasheet

N-Channel JFET, 30V, 3.9A ID, 65mR Rds On, SOT-23

Diodes

ZXMN3A14FTA

Name: ZXMN3A14FTA Diodes
Brand: Diodes
SKU: ZXMN3A14FTA

N-Channel JFET, 30V, 3.9A ID, 65mR Rds On, SOT-23

N-Channel Silicon Metal-Oxide Semiconductor FET for small signal applications. Features a 30V Drain-to-Source Voltage (Vdss) and a maximum continuous drain current of 3.9A. Offers a low Drain-source On Resistance (Rds On) of 65mR. Packaged in a SOT-23-3 surface mount case with a 1.02mm height, 3.04mm length, and 1.4mm width. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.5W.

PackageSOT-23-3

Current Rating3.5A

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Diodes ZXMN3A14FTA technical specifications.

General

Package/Case	SOT-23-3
Continuous Drain Current (ID)	3.9A
Current Rating	3.5A
Drain to Source Resistance	95mR
Drain to Source Voltage (Vdss)	30V
Drain-source On Resistance-Max	65mR
Fall Time	5.3ns
Gate to Source Voltage (Vgs)	20V
Height	1.02mm
Input Capacitance	448pF
Lead Free	Lead Free
Length	3.04mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	1W
Mount	Surface Mount
Number of Channels	1
Number of Elements	1
Package Quantity	3000
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	1.5W
Radiation Hardening	No
Rds On Max	65mR
Reach SVHC Compliant	Yes
RoHS Compliant	Yes
Turn-Off Delay Time	13.1ns
Turn-On Delay Time	2.4ns
DC Rated Voltage	30V
Weight	0.000282oz
Width	1.4mm