N-Channel Silicon Metal-Oxide Semiconductor FET for small signal applications. Features a 30V Drain-to-Source Voltage (Vdss) and a maximum continuous drain current of 3.9A. Offers a low Drain-source On Resistance (Rds On) of 65mR. Packaged in a SOT-23-3 surface mount case with a 1.02mm height, 3.04mm length, and 1.4mm width. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.5W.
PackageSOT-23-3
Current Rating3.5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes ZXMN3A14FTA technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 3.9A |
| Current Rating | 3.5A |
| Drain to Source Resistance | 95mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 65mR |
| Fall Time | 5.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.02mm |
| Input Capacitance | 448pF |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| Rds On Max | 65mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 13.1ns |
| Turn-On Delay Time | 2.4ns |
| DC Rated Voltage | 30V |
| Weight | 0.000282oz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXMN3A14FTA Datasheet
Download the complete datasheet for Diodes ZXMN3A14FTA to view detailed technical specifications.
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