N-Channel Silicon Metal-Oxide Semiconductor FET, SOT-23 package, offering 30V Drain-to-Source Breakdown Voltage and a maximum continuous drain current of 3.5A. Features a low Drain-source On-Resistance of 80mR. Operates with a Gate-to-Source Voltage up to 12V, exhibiting turn-on delay time of 3.6ns and fall time of 9.8ns. This surface mount component supports a maximum power dissipation of 1W and is RoHS compliant.
Sign in to ask questions about the Diodes ZXMN3B14FTA datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Diodes ZXMN3B14FTA technical specifications.
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 3.5A |
| Current Rating | 3.5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 140mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 80mR |
| Fall Time | 9.8ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.02mm |
| Input Capacitance | 568pF |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 80mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 17.3ns |
| Turn-On Delay Time | 3.6ns |
| DC Rated Voltage | 30V |
| Weight | 0.000282oz |
| Width | 1.4mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZXMN3B14FTA to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
