N-Channel Silicon Metal-oxide Semiconductor FET, 2-Element, Surface Mount SOP-8 package. Features 30V Drain to Source Breakdown Voltage (Vdss) and 7.3A Continuous Drain Current (ID). Offers low 24mR Drain-source On Resistance (Rds On Max) and fast switching times with 2.9ns Turn-On Delay and 8ns Fall Time. Operates from -55°C to 150°C with 1.8W Max Power Dissipation.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes ZXMN3F31DN8TA technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7.3A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 24mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 24mR |
| Fall Time | 8ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 608pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 24mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 2.9ns |
| Weight | 0.00261oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXMN3F31DN8TA Datasheet
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