N-Channel Power MOSFET, TO-252-3 package, featuring 60V drain-source voltage and 7.9A continuous drain current. Offers low 80mΩ drain-source resistance and 2.12W power dissipation. Operates from -55°C to 150°C with fast switching times including 2.6ns turn-on delay and 4.6ns fall time. Surface mountable, RoHS and REACH SVHC compliant.
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Diodes ZXMN6A08KTC technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 7.9A |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 4.6ns |
| FET Type | 1 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 459pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.12W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 80mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 12.3ns |
| Turn-On Delay Time | 2.6ns |
| Width | 6.22mm |
| RoHS | Compliant |
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