N-channel silicon MOSFET for surface mounting, featuring a 60V drain-source breakdown voltage and a maximum continuous drain current of 4.4A. This single-element transistor offers a low drain-source on-resistance of 120mΩ, with fast switching speeds including a 1.95ns turn-on delay and 4.6ns fall time. Packaged in a SOT-223 case, it operates across a wide temperature range from -55°C to 150°C and supports a maximum power dissipation of 3.9W.
PackageSOT-223
Current Rating2.4A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes ZXMN6A11GTA technical specifications.
General
Package/Case
SOT-223
Continuous Drain Current (ID)
4.4A
Current Rating
2.4A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
180mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
120mR
Fall Time
4.6ns
Gate to Source Voltage (Vgs)
20V
Height
1.65mm
Input Capacitance
330pF
Lead Free
Lead Free
Length
6.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.9W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
120mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
8.2ns
Turn-On Delay Time
1.95ns
DC Rated Voltage
60V
Weight
0.000282oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXMN6A11GTA Datasheet
Download the complete datasheet for Diodes ZXMN6A11GTA to view detailed technical specifications.
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