N-Channel Silicon Metal-oxide Semiconductor FET, a single-element JFET designed for small signal applications. Features a 60V drain-source voltage (Vdss) and a maximum continuous drain current (ID) of 3.6A. Offers a low drain-source on-resistance (Rds On) of 120mR. Packaged in a SOT-89-3 surface mount case, this component operates within a temperature range of -55°C to 150°C and boasts fast switching times with a turn-on delay of 1.95ns and fall time of 4.6ns.
PackageSOT-89-3
Current Rating2.8A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes ZXMN6A11ZTA technical specifications.
General
Package/Case
SOT-89-3
Continuous Drain Current (ID)
3.6A
Current Rating
2.8A
Drain to Source Resistance
180mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
120mR
Fall Time
4.6ns
Gate to Source Voltage (Vgs)
20V
Height
1.6mm
Input Capacitance
330pF
Lead Free
Lead Free
Length
4.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.6W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.6W
Radiation Hardening
No
Rds On Max
120mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
8.2ns
Turn-On Delay Time
1.95ns
DC Rated Voltage
60V
Weight
0.004603oz
Width
2.6mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXMN6A11ZTA Datasheet
Download the complete datasheet for Diodes ZXMN6A11ZTA to view detailed technical specifications.
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