Diodes
ZXMNS3BM832TA
Small Signal Field-Effect Transistor, 2.72A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3 MM X 2 MM, DUAL DIE, MLP, 8 PIN
Small Signal Field-Effect Transistor, 2.72A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3 MM X 2 MM, DUAL DIE, MLP, 8 PIN
MountingSurface Mount
PolarityN-CHANNEL
Power3W
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Technical Specifications
Diodes ZXMNS3BM832TA technical specifications.
General
| Continuous Drain Current (ID) | 2.72A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 250mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 2.1ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 314pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3W |
| Radiation Hardening | No |
| Rds On Max | 180mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 5.1ns |
| Turn-On Delay Time | 1.1ns |
Compliance
| RoHS | Compliant |
Datasheet
No datasheet is available for this part.