ZXMP10A13FQTA

P-channel silicon JFET with 100V drain-to-source voltage (Vdss) and 600mA continuous drain current (ID). Features a low 1 Ohm Rds On, 141pF input capacitance, and fast switching times with a 1.6ns turn-on delay and 3.3ns fall time. Designed for surface mounting in a 3-pin SOT-23 plastic package, operating from -55°C to 150°C with 625mW max power dissipation. Lead-free and RoHS compliant.