P-channel silicon JFET with 100V drain-to-source voltage (Vdss) and 600mA continuous drain current (ID). Features a low 1 Ohm Rds On, 141pF input capacitance, and fast switching times with a 1.6ns turn-on delay and 3.3ns fall time. Designed for surface mounting in a 3-pin SOT-23 plastic package, operating from -55°C to 150°C with 625mW max power dissipation. Lead-free and RoHS compliant.
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Diodes ZXMP10A13FQTA technical specifications.
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 600mA |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 3.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 141pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Rds On Max | 1R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 5.9ns |
| Turn-On Delay Time | 1.6ns |
| RoHS | Compliant |
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