P-channel Silicon Metal-oxide Semiconductor FET, a single-element JFET in a SOT-23 package. Features a continuous drain current of -700mA, drain-source voltage of -100V, and a maximum drain-source on resistance of 1 Ohm. Operating temperature range is -55°C to 150°C with a maximum power dissipation of 806mW. Surface mountable with a 1.6ns turn-on delay and 3.3ns fall time.
PackageSOT-23
Current Rating-500mA
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Diodes ZXMP10A13FTA technical specifications.
General
Package/Case
SOT-23
Continuous Drain Current (ID)
-700mA
Current Rating
-500mA
Drain to Source Resistance
1.45R
Drain to Source Voltage (Vdss)
-100V
Drain-source On Resistance-Max
1R
Fall Time
3.3ns
Gate to Source Voltage (Vgs)
20V
Height
1.02mm
Input Capacitance
141pF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
806mW
Radiation Hardening
No
Rds On Max
1R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
-4V
Turn-Off Delay Time
5.9ns
Turn-On Delay Time
1.6ns
DC Rated Voltage
-100V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXMP10A13FTA Datasheet
Download the complete datasheet for Diodes ZXMP10A13FTA to view detailed technical specifications.
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