N-Channel Power MOSFET, SOT-23 package, featuring 100V drain-source voltage (Vdss) and 1.6A continuous drain current (ID). Offers a low drain-source on-resistance (Rds On) of 350mΩ. This silicon Metal-oxide Semiconductor FET operates with a gate-source voltage (Vgs) up to 20V, exhibiting fast switching characteristics with a 3ns turn-on delay and 7.2ns fall time. Designed for surface mounting, it supports a maximum power dissipation of 1.7W and operates within a temperature range of -55°C to 150°C.
PackageSOT-23
Current Rating-1.8A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Diodes ZXMP10A17E6TA technical specifications.
General
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 1.6A |
| Current Rating | -1.8A |
| Drain to Source Resistance | 450mR |
| Drain to Source Voltage (Vdss) | -100V |
| Drain-source On Resistance-Max | 350mR |
| Fall Time | 7.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.3mm |
| Input Capacitance | 424pF |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.7W |
| Radiation Hardening | No |
| Rds On Max | 350mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -2V |
| Turn-Off Delay Time | 13.4ns |
| Turn-On Delay Time | 3ns |
| DC Rated Voltage | -100V |
| Weight | 0.000529oz |
| Width | 1.8mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXMP10A17E6TA Datasheet
Download the complete datasheet for Diodes ZXMP10A17E6TA to view detailed technical specifications.
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