P-channel enhancement mode power MOSFET featuring a 100V drain-source voltage and 1.7A continuous drain current. This single dual drain transistor is housed in a TO-261AA surface-mount package with 4 pins (3+tab). Key specifications include a maximum drain-source on-resistance of 350mΩ at 10V, typical gate charge of 7.1nC at 6V, and input capacitance of 424pF at 50V. Maximum power dissipation is 3900mW, with an operating temperature range of -55°C to 150°C.
PackageTO-261AA
MountingSurface Mount
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Technical Specifications
Diodes ZXMP10A17GTA technical specifications.
General
| Package/Case | TO-261AA |
| Pin Count | 4 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.7(Max) |
| Package Width (mm) | 3.7(Max) |
| Package Height (mm) | 1.65(Max) |
| Seated Plane Height (mm) | 1.8(Max) |
| Pin Pitch (mm) | 2.3 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Dual Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 1.7A |
| Maximum Drain Source Resistance | 350@10VmOhm |
| Typical Gate Charge @ Vgs | 7.1@6V|10.7@10VnC |
| Typical Gate Charge @ 10V | 10.7nC |
| Typical Input Capacitance @ Vds | 424@50VpF |
| Maximum Power Dissipation | 3900mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 6M0U4 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Diodes ZXMP10A17GTA Datasheet
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