
P-channel MOSFET, designed for power applications, features a -100V drain-source voltage and a maximum drain-source on-resistance of 150mΩ. This single-element transistor offers a continuous drain current of 3.7A and a maximum power dissipation of 3.9W. Packaged in a SOT-223 surface-mount case, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a turn-on delay time of 4.6ns and a fall time of 17.9ns.
Diodes ZXMP10A18GTA technical specifications.
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 3.7A |
| Current | 37A |
| Current Rating | -3.7A |
| Drain to Source Resistance | 190mR |
| Drain to Source Voltage (Vdss) | -100V |
| Drain-source On Resistance-Max | 150mR |
| Fall Time | 17.9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.65mm |
| Input Capacitance | 1.055nF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 3.9W |
| Radiation Hardening | No |
| Rds On Max | 150mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -2V |
| Turn-Off Delay Time | 33.9ns |
| Turn-On Delay Time | 4.6ns |
| Voltage | 100V |
| DC Rated Voltage | -100V |
| Weight | 0.000282oz |
| Width | 3.7mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZXMP10A18GTA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
