
P-channel, surface-mount JFET with 30V drain-source voltage and 12.3A continuous drain current. Features 12mΩ maximum drain-source on-resistance, 4.6nF input capacitance, and 1.56W maximum power dissipation. Operates from -55°C to 150°C, with turn-on delay of 5.4ns and fall time of 55.6ns. Packaged in tape and reel for 500 units.
Diodes ZXMP3F35N8TA technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 12.3A |
| Drain to Source Resistance | 12mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 12mR |
| Fall Time | 55.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 4.6nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.56W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 12mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 103ns |
| Turn-On Delay Time | 5.4ns |
| Weight | 0.01787oz |
| Width | 4mm |
| RoHS | Not CompliantNo |
Download the complete datasheet for Diodes ZXMP3F35N8TA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
