P-channel MOSFET transistor in TO-252-3 surface mount package. Features -60V drain-source voltage (Vdss) and 8.2A continuous drain current (ID). Offers a maximum drain-source on-resistance (Rds On) of 85mR. Operates with a gate-source voltage (Vgs) up to 20V and a threshold voltage of -1V. Includes fast switching characteristics with turn-on delay of 3.5ns and fall time of 10ns. Maximum power dissipation is 9.76W.
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Diodes ZXMP6A16KTC technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 8.2A |
| Drain to Source Resistance | 85mR |
| Drain to Source Voltage (Vdss) | -60V |
| Drain-source On Resistance-Max | 85mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 1.021nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 9.76W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 9.76W |
| Radiation Hardening | No |
| Rds On Max | 85mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 3.5ns |
| Weight | 0.139332oz |
| Width | 6.22mm |
| RoHS | Compliant |
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