P-channel MOSFET transistor in TO-252-3 surface mount package. Features -60V drain-source voltage (Vdss) and 8.2A continuous drain current (ID). Offers a maximum drain-source on-resistance (Rds On) of 85mR. Operates with a gate-source voltage (Vgs) up to 20V and a threshold voltage of -1V. Includes fast switching characteristics with turn-on delay of 3.5ns and fall time of 10ns. Maximum power dissipation is 9.76W.
PackageTO-252-3
MountingSurface Mount
PolarityP-CHANNEL
Power9.76W
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Technical Specifications
Diodes ZXMP6A16KTC technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
8.2A
Drain to Source Resistance
85mR
Drain to Source Voltage (Vdss)
-60V
Drain-source On Resistance-Max
85mR
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
1.021nF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
9.76W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
9.76W
Radiation Hardening
No
Rds On Max
85mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
-1V
Turn-Off Delay Time
35ns
Turn-On Delay Time
3.5ns
Weight
0.139332oz
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXMP6A16KTC Datasheet
Download the complete datasheet for Diodes ZXMP6A16KTC to view detailed technical specifications.
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