P-channel MOSFET with a 60V drain-source voltage and 55mΩ maximum drain-source on-resistance. Features a continuous drain current of 4.8A and a maximum power dissipation of 2.1W. This surface-mount device is housed in an SOIC-8 package, offering a 2-element configuration. Operates within a temperature range of -55°C to 150°C and is RoHS compliant.
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| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.8A |
| Current Rating | -4.6A |
| Drain to Source Resistance | 55mR |
| Drain to Source Voltage (Vdss) | -60V |
| Drain-source On Resistance-Max | 55mR |
| Fall Time | 23ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.58nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.1W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.1W |
| Radiation Hardening | No |
| Rds On Max | 55mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 4.6ns |
| DC Rated Voltage | -60V |
| Weight | 0.00261oz |
| Width | 4mm |
| RoHS | Compliant |
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