
N-channel MOSFET with 60V drain-source voltage and 1.3A continuous drain current. Features 350mΩ drain-to-source resistance and 3W maximum power dissipation. This INTELLIFET® device offers over-voltage and over-temperature fault protection, with a low-side output configuration. Packaged in SOT-223 for surface mounting, it operates from -40°C to 150°C.
Diodes ZXMS6004DGTA technical specifications.
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 1.3A |
| Current | 1.3A |
| Drain to Source Resistance | 350mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 15us |
| Fault Protection | Over Voltage, Over Temperature |
| FET Type | 1 N-Channel |
| Gate to Source Voltage (Vgs) | 5V |
| Height | 1.65mm |
| Interface | On/Off |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Output Current | 1.3A |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Outputs | 1 |
| Output Configuration | Low Side |
| Output Current | 700mA |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.3W |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | INTELLIFET® |
| Turn-Off Delay Time | 45us |
| Turn-On Delay Time | 5us |
| Voltage | 5.5V |
| Weight | 0.000282oz |
| Width | 3.7mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZXMS6004DGTA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
