N-channel MOSFET with 60V drain-source voltage and 1.3A continuous drain current. Features 350mΩ drain-to-source resistance and 3W maximum power dissipation. This INTELLIFET® device offers over-voltage and over-temperature fault protection, with a low-side output configuration. Packaged in SOT-223 for surface mounting, it operates from -40°C to 150°C.
PackageSOT-223
Voltage5.5V
Current1.3A
MountingSurface Mount
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Technical Specifications
Diodes ZXMS6004DGTA technical specifications.
General
Package/Case
SOT-223
Continuous Drain Current (ID)
1.3A
Current
1.3A
Drain to Source Resistance
350mR
Drain to Source Voltage (Vdss)
60V
Fall Time
15us
Fault Protection
Over Voltage, Over Temperature
FET Type
1 N-Channel
Gate to Source Voltage (Vgs)
5V
Height
1.65mm
Interface
On/Off
Lead Free
Lead Free
Length
6.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Output Current
1.3A
Max Power Dissipation
3W
Mount
Surface Mount
Number of Channels
1
Number of Outputs
1
Output Configuration
Low Side
Output Current
700mA
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.3W
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Series
INTELLIFET®
Turn-Off Delay Time
45us
Turn-On Delay Time
5us
Voltage
5.5V
Weight
0.000282oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXMS6004DGTA Datasheet
Download the complete datasheet for Diodes ZXMS6004DGTA to view detailed technical specifications.
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