N-Channel Silicon Metal-oxide Semiconductor FET, 60V Drain to Source Voltage (Vdss), 1.3A Continuous Drain Current (ID). This surface mount transistor features a 350mR Drain to Source Resistance and a 700mV Gate to Source Voltage (Vgs). Designed for low-side output configuration, it offers 1.6W Max Power Dissipation and operates within a -40°C to 150°C temperature range. Includes over-voltage and over-temperature fault protection.
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Diodes ZXMS6004SGTA technical specifications.
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 1.3A |
| Current | 1.3A |
| Drain to Source Resistance | 350mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 15us |
| Fault Protection | Over Voltage, Over Temperature |
| FET Type | 1 N-Channel |
| Gate to Source Voltage (Vgs) | 700mV |
| Height | 1.65mm |
| Interface | On/Off |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Output Current | 1.3A |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Outputs | 1 |
| Output Configuration | Low Side |
| Output Current | 700mA |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, INTELLIFET® |
| Turn-Off Delay Time | 45us |
| Turn-On Delay Time | 5us |
| Voltage | 5.5V |
| Weight | 0.000282oz |
| Width | 3.7mm |
| RoHS | Compliant |
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