N-Channel MOSFET, 60V drain-source voltage, 2.8A continuous drain current, and 0.125 ohm drain-source on-resistance. Features include over-voltage and over-temperature fault protection, a 1V threshold voltage, and a low-side output configuration. This surface-mount device is housed in a SOT-223 plastic package, offering a maximum power dissipation of 1.3W and operating temperature range of -40°C to 150°C.
PackageSOT-223
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes ZXMS6006DGTA technical specifications.
General
Package/Case
SOT-223
Continuous Drain Current (ID)
2.8A
Drain to Source Resistance
100mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
100mR
Fall Time
15000ns
Fault Protection
Over Voltage, Over Temperature
Gate to Source Voltage (Vgs)
5V
Height
1.65mm
Interface
On/Off
Lead Free
Lead Free
Length
6.55mm
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Output Current
2.8A
Max Power Dissipation
1.3W
Mount
Surface Mount
Number of Channels
1
Number of Outputs
1
On-State Resistance
75mR
Output Configuration
Low Side
Output Current per Channel
2.8A
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
INTELLIFET®
Threshold Voltage
1V
Turn-Off Delay Time
34000ns
Turn-On Delay Time
8600ns
Weight
0.000282oz
Width
3.55mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXMS6006DGTA Datasheet
Download the complete datasheet for Diodes ZXMS6006DGTA to view detailed technical specifications.
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