N-channel, 2-element silicon MOSFET with 60V drain-source voltage and 2.8A continuous drain current. Features low on-state resistance of 75mR and integrated over-voltage and over-temperature fault protection. This surface-mount device offers fast switching with turn-on delay of 8.6µs and fall time of 15µs. Suitable for low-side output configurations, operating from -40°C to 125°C.
PackageSMD/SMT
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes ZXMS6006DT8TA technical specifications.
General
Package/Case
SMD/SMT
Continuous Drain Current (ID)
2.8A
Drain to Source Resistance
75mR
Drain to Source Voltage (Vdss)
60V
Fall Time
15us
Fault Protection
Over Voltage, Over Temperature
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
5V
Interface
On/Off
Max Operating Temperature
125°C
Min Operating Temperature
-40°C
Max Output Current
2.8A
Max Power Dissipation
2.13W
Mount
Surface Mount
Number of Channels
2
Number of Outputs
2
On-State Resistance
75mR
Output Configuration
Low Side
Output Current per Channel
2.8A
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
INTELLIFET®
Threshold Voltage
1V
Turn-Off Delay Time
34us
Turn-On Delay Time
8.6us
Compliance
RoHS
Compliant
Datasheet
Diodes ZXMS6006DT8TA Datasheet
Download the complete datasheet for Diodes ZXMS6006DT8TA to view detailed technical specifications.
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