N-channel, 2-element silicon MOSFET with 60V drain-source voltage and 2.8A continuous drain current. Features low on-state resistance of 75mR and integrated over-voltage and over-temperature fault protection. This surface-mount device offers fast switching with turn-on delay of 8.6µs and fall time of 15µs. Suitable for low-side output configurations, operating from -40°C to 125°C.
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Diodes ZXMS6006DT8TA technical specifications.
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 2.8A |
| Drain to Source Resistance | 75mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 15us |
| Fault Protection | Over Voltage, Over Temperature |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 5V |
| Interface | On/Off |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Output Current | 2.8A |
| Max Power Dissipation | 2.13W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Outputs | 2 |
| On-State Resistance | 75mR |
| Output Configuration | Low Side |
| Output Current per Channel | 2.8A |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | INTELLIFET® |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 34us |
| Turn-On Delay Time | 8.6us |
| RoHS | Compliant |
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