N-channel silicon MOSFET for surface mounting, featuring 60V drain-source voltage and 2.8A continuous drain current. This single-element JFET offers 75mΩ drain-to-source resistance and a 1V threshold voltage. Designed with over-voltage and over-temperature fault protection, it operates from -40°C to 125°C. The device is housed in a TO-261AA (SOT-223) plastic package, supplied on tape and reel, and is RoHS compliant.
PackageSOT-223
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes ZXMS6006SGTA technical specifications.
General
Package/Case
SOT-223
Continuous Drain Current (ID)
2.8A
Drain to Source Resistance
75mR
Drain to Source Voltage (Vdss)
60V
Fall Time
15us
Fault Protection
Over Voltage, Over Temperature
FET Type
1 N-Channel
Gate to Source Voltage (Vgs)
5V
Height
1.65mm
Interface
On/Off
Lead Free
Lead Free
Length
6.55mm
Max Operating Temperature
125°C
Min Operating Temperature
-40°C
Max Output Current
2.8A
Max Power Dissipation
1.6W
Mount
Surface Mount
Nominal Vgs
1V
Number of Channels
1
Number of Outputs
1
On-State Resistance
75mR
Output Configuration
Low Side
Output Current per Channel
2.8A
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
INTELLIFET®
Threshold Voltage
1V
Turn-Off Delay Time
34000ns
Turn-On Delay Time
8600ns
Weight
0.000282oz
Width
3.55mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXMS6006SGTA Datasheet
Download the complete datasheet for Diodes ZXMS6006SGTA to view detailed technical specifications.
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