N-channel silicon MOSFET for surface mounting, featuring 60V drain-source voltage and 2.8A continuous drain current. This single-element JFET offers 75mΩ drain-to-source resistance and a 1V threshold voltage. Designed with over-voltage and over-temperature fault protection, it operates from -40°C to 125°C. The device is housed in a TO-261AA (SOT-223) plastic package, supplied on tape and reel, and is RoHS compliant.
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| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 2.8A |
| Drain to Source Resistance | 75mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 15us |
| Fault Protection | Over Voltage, Over Temperature |
| FET Type | 1 N-Channel |
| Gate to Source Voltage (Vgs) | 5V |
| Height | 1.65mm |
| Interface | On/Off |
| Lead Free | Lead Free |
| Length | 6.55mm |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Output Current | 2.8A |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Number of Channels | 1 |
| Number of Outputs | 1 |
| On-State Resistance | 75mR |
| Output Configuration | Low Side |
| Output Current per Channel | 2.8A |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | INTELLIFET® |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 34000ns |
| Turn-On Delay Time | 8600ns |
| Weight | 0.000282oz |
| Width | 3.55mm |
| RoHS | Compliant |
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