NPN bipolar junction transistor featuring a 50V collector-emitter breakdown voltage and 4A continuous collector current. This surface mount device, housed in a SOT-23-6 package, offers a 115MHz gain bandwidth product and a maximum power dissipation of 1.7W. Operating across a temperature range of -55°C to 150°C, it is lead-free and RoHS compliant.
Frequency115MHz
PackageSOT-23-6
Current Rating4A
MountingSurface Mount
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Technical Specifications
Diodes ZXT13N50DE6TA technical specifications.
General
Package/Case
SOT-23-6
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
145mV
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
180mV
Continuous Collector Current
4A
Current Rating
4A
Emitter Base Voltage (VEBO)
7.5V
Frequency
115MHz
Gain Bandwidth Product
115MHz
Height
1.3mm
Lead Free
Lead Free
Length
3.1mm
Max Breakdown Voltage
50V
Max Collector Current
4A
Max Frequency
115MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.1W
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
1.7W
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
115MHz
DC Rated Voltage
50V
Weight
0.000529oz
Width
1.8mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXT13N50DE6TA Datasheet
Download the complete datasheet for Diodes ZXT13N50DE6TA to view detailed technical specifications.
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