Surface mount bipolar junction transistor featuring NPN and PNP polarity, with a 30V collector-emitter breakdown voltage and 1.5A maximum collector current. This 2-element silicon transistor offers a 375mV collector-emitter saturation voltage and operates within a temperature range of -55°C to 150°C. Packaged in a SOT-26, it supports a maximum power dissipation of 1.7W and is lead-free and RoHS compliant.
PackageSOT-26
Current Rating1.5A
MountingSurface Mount
PolarityNPN, PNP
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Technical Specifications
Diodes ZXTC2045E6TA technical specifications.
General
Package/Case
SOT-26
Collector Base Voltage (VCBO)
40V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
375mV
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
375mV
Current Rating
1.5A
Emitter Base Voltage (VEBO)
7V
Height
1.3mm
Lead Free
Lead Free
Length
3.1mm
Max Breakdown Voltage
30V
Max Collector Current
1.5A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.7W
Mount
Surface Mount
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN, PNP
Power Dissipation
1.7W
RoHS Compliant
Yes
Weight
0.000282oz
Width
1.8mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXTC2045E6TA Datasheet
Download the complete datasheet for Diodes ZXTC2045E6TA to view detailed technical specifications.
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