Surface mount bipolar junction transistor featuring NPN and PNP polarity, with a 30V collector-emitter breakdown voltage and 1.5A maximum collector current. This 2-element silicon transistor offers a 375mV collector-emitter saturation voltage and operates within a temperature range of -55°C to 150°C. Packaged in a SOT-26, it supports a maximum power dissipation of 1.7W and is lead-free and RoHS compliant.
PackageSOT-26
Current Rating1.5A
MountingSurface Mount
PolarityNPN, PNP
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Technical Specifications
Diodes ZXTC2045E6TA technical specifications.
General
| Package/Case | SOT-26 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 375mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 375mV |
| Current Rating | 1.5A |
| Emitter Base Voltage (VEBO) | 7V |
| Height | 1.3mm |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.7W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Power Dissipation | 1.7W |
| RoHS Compliant | Yes |
| Weight | 0.000282oz |
| Width | 1.8mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXTC2045E6TA Datasheet
Download the complete datasheet for Diodes ZXTC2045E6TA to view detailed technical specifications.
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