Dual-element NPN and PNP silicon bipolar junction transistor for surface mount applications. Features a 40V collector-emitter breakdown voltage and 3A maximum collector current. Operates with a 190MHz frequency and 270MHz gain bandwidth product. Packaged in a SOT-26 with a maximum power dissipation of 1.7W. Compliant with RoHS and REACH SVHC standards.
Frequency190MHz
PackageSOT-26
MountingSurface Mount
PolarityNPN, PNP
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Technical Specifications
Diodes ZXTC2063E6TA technical specifications.
General
| Package/Case | SOT-26 |
| Collector Base Voltage (VCBO) | 130V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 195mV |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 190MHz |
| Gain Bandwidth Product | 270MHz |
| Height | 1.3mm |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.7W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Power Dissipation | 1.7W |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 270MHz |
| Weight | 0.000282oz |
| Width | 1.8mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXTC2063E6TA Datasheet
Download the complete datasheet for Diodes ZXTC2063E6TA to view detailed technical specifications.
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