The ZXTD3M832TA is a surface mount NPN transistor with a collector-emitter breakdown voltage of 40V and a maximum collector current of 3A. It operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.7W. This RoHS compliant device is packaged in a flatpack with a PQFP-F10 leadframe and is suitable for use in a variety of applications.
MountingSurface Mount
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Technical Specifications
Diodes ZXTD3M832TA technical specifications.
General
| Collector Emitter Breakdown Voltage | 40V |
| Collector-emitter Voltage-Max | 370mV |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.7W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| RoHS Compliant | Yes |
| Transition Frequency | 190MHz |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXTD3M832TA Datasheet
Download the complete datasheet for Diodes ZXTD3M832TA to view detailed technical specifications.
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