Dual-element NPN/PNP silicon bipolar junction transistor (BJT) for small signal applications. Features a 1A maximum collector current, 60V collector-emitter breakdown voltage, and 150MHz transition frequency. Housed in a SOT-23 surface-mount package, this RoHS compliant component offers a minimum hFE of 100 and operates across a temperature range of -55°C to 150°C. Maximum power dissipation is 1.7W.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Diodes ZXTD4591E6TA datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| Height | 1.3mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 1A |
| Max Frequency | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.7W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Power Dissipation | 1.7W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| Weight | 0.000529oz |
| Width | 1.75mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZXTD4591E6TA to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
