Dual-element NPN/PNP silicon bipolar junction transistor (BJT) for small signal applications. Features a 1A maximum collector current, 60V collector-emitter breakdown voltage, and 150MHz transition frequency. Housed in a SOT-23 surface-mount package, this RoHS compliant component offers a minimum hFE of 100 and operates across a temperature range of -55°C to 150°C. Maximum power dissipation is 1.7W.
Frequency150MHz
PackageSOT-23
Current Rating1A
MountingSurface Mount
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Technical Specifications
Diodes ZXTD4591E6TA technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
600mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
600mV
Current Rating
1A
Emitter Base Voltage (VEBO)
5V
Frequency
150MHz
Gain Bandwidth Product
150MHz
Height
1.3mm
hFE Min
100
Lead Free
Lead Free
Length
3mm
Max Breakdown Voltage
60V
Max Collector Current
1A
Max Frequency
150MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.7W
Mount
Surface Mount
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN, PNP
Power Dissipation
1.7W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
150MHz
Weight
0.000529oz
Width
1.75mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXTD4591E6TA Datasheet
Download the complete datasheet for Diodes ZXTD4591E6TA to view detailed technical specifications.
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