
NPN bipolar junction transistor for surface mount applications. Features a maximum collector current of 4.5A and a collector-emitter breakdown voltage of 20V. Offers a transition frequency of 140MHz and a maximum power dissipation of 1.7W. Operates across a temperature range of -55°C to 150°C. Packaged in tape and reel, this lead-free and RoHS compliant component is designed for efficient electronic circuits.
Diodes ZXTDBM832TA technical specifications.
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