NPN Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V Collector-Emitter Breakdown Voltage and 4A Continuous Collector Current. Offers a 165MHz Gain Bandwidth Product and 1.7W Max Power Dissipation. Packaged in a compact 3 x 2 mm MLP832, 10-pin surface mount configuration. Operates across a wide temperature range from -55°C to 150°C.
Current Rating4A
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes ZXTDCM832TA technical specifications.
General
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 270mV |
| Collector-emitter Voltage-Max | 320mV |
| Continuous Collector Current | 4A |
| Current Rating | 4A |
| Emitter Base Voltage (VEBO) | 7.5V |
| Gain Bandwidth Product | 165MHz |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.7W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 165MHz |
| DC Rated Voltage | 50V |
| Width | 2mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXTDCM832TA Datasheet
Download the complete datasheet for Diodes ZXTDCM832TA to view detailed technical specifications.
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