The ZXTDE4M832TA is a surface mount bipolar junction transistor with a maximum collector-emitter breakdown voltage of 70V and a continuous collector current of -2.5A. It has a maximum power dissipation of 1W and operates over a temperature range of -55°C to 150°C. The transistor is RoHS compliant and available in tape and reel packaging with 3000 units per package.
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Diodes ZXTDE4M832TA technical specifications.
| Collector Base Voltage (VCBO) | 70V |
| Collector Emitter Breakdown Voltage | 70V |
| Collector-emitter Voltage-Max | 325mV |
| Continuous Collector Current | -2.5A |
| Current Rating | 3.5A |
| Emitter Base Voltage (VEBO) | 7.5V |
| Gain Bandwidth Product | 180MHz |
| Height | 1mm |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Breakdown Voltage | 70V |
| Max Collector Current | 2.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| RoHS Compliant | Yes |
| Transition Frequency | 180MHz |
| Width | 2mm |
| RoHS | Compliant |
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