Diodes
ZXTN04120HKTC
Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3/2
Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3/2
PackageTO-252-3
MountingSurface Mount
PolarityNPN
Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the Diodes ZXTN04120HKTC datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
Diodes ZXTN04120HKTC technical specifications.
General
| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | 140V |
| Collector Emitter Breakdown Voltage | 120V |
| Collector-emitter Voltage-Max | 1.5V |
| Continuous Collector Current | 1.5A |
| Emitter Base Voltage (VEBO) | 14V |
| Gain Bandwidth Product | 150MHz |
| hFE Min | 500 |
| Max Breakdown Voltage | 120V |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| Weight | 0.007055oz |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXTN04120HKTC Datasheet
Download the complete datasheet for Diodes ZXTN04120HKTC to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
Product Images
