
NPN silicon bipolar junction transistor for surface mount applications. Features a 100V collector-emitter breakdown voltage and 5.25A continuous collector current. Offers a low 65mV collector-emitter saturation voltage and a transition frequency of 150MHz. Packaged in a 3-pin SOT-89 case, this component operates from -55°C to 150°C with a maximum power dissipation of 4.46W. Lead-free and RoHS compliant.
Diodes ZXTN19100CZTA technical specifications.
| Package/Case | SOT-89-3 |
| Collector Base Voltage (VCBO) | 200V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 65mV |
| Collector-emitter Voltage-Max | 350mV |
| Continuous Collector Current | 5.25A |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 150MHz |
| Height | 1.6mm |
| Lead Free | Lead Free |
| Length | 4.6mm |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 5.25A |
| Max Frequency | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 4.46W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| Weight | 0.004603oz |
| Width | 2.6mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZXTN19100CZTA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
