NPN bipolar transistor in TO-226-3 package, featuring a 60V collector-emitter breakdown voltage and 4.5A continuous collector current. Offers a 150V collector-base voltage and 7V emitter-base voltage. With a transition frequency of 130MHz and maximum power dissipation of 1W, this lead-free, RoHS compliant component operates from -55°C to 150°C.
PackageTO-226-3
Current Rating4.5A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Diodes ZXTN2010A technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | 150V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector-emitter Voltage-Max | 210mV |
| Continuous Collector Current | 4.5A |
| Current Rating | 4.5A |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 130MHz |
| Height | 4.01mm |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Collector Current | 4.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 4000 |
| Packaging | Bulk |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 130MHz |
| DC Rated Voltage | 60V |
| Width | 2.41mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXTN2010A Datasheet
Download the complete datasheet for Diodes ZXTN2010A to view detailed technical specifications.
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