NPN silicon bipolar junction transistor (BJT) for surface mount applications. Features a 100V collector-emitter breakdown voltage (VCEO) and a continuous collector current (IC) rating of 4.5A. Offers a transition frequency (fT) of 130MHz and a maximum power dissipation of 2.1W. Packaged in a SOT-89 case, this 3-pin component is lead-free and RoHS compliant.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Diodes ZXTN2011ZTA datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 200V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 195mV |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 195mV |
| Continuous Collector Current | 4.5A |
| Current Rating | 4.5A |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 130MHz |
| Gain Bandwidth Product | 130MHz |
| Height | 1.6mm |
| Lead Free | Lead Free |
| Length | 4.6mm |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 4.5A |
| Max Frequency | 130MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 2.1W |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 130MHz |
| DC Rated Voltage | 100V |
| Weight | 0.001834oz |
| Width | 2.6mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZXTN2011ZTA to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
