
NPN bipolar junction transistor in a SOT-23-3 surface mount package. Features a 60V collector-emitter breakdown voltage and a 5A continuous collector current. Offers a 130MHz gain bandwidth product and a low 45mV collector-emitter saturation voltage. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 1.56W. RoHS compliant and lead-free.
Diodes ZXTN2018FTA technical specifications.
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