NPN silicon bipolar junction transistor in a SOT-23 surface mount package. Features a 100V collector-emitter breakdown voltage and a 4A maximum collector current. Offers a 150mV collector-emitter saturation voltage and a 130MHz transition frequency. Designed for operation between -55°C and 150°C with a maximum power dissipation of 1.56W.
Frequency130MHz
PackageSOT-23
Current Rating4A
MountingSurface Mount
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Technical Specifications
Diodes ZXTN2020FTA technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
160V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
150mV
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
150mV
Current Rating
4A
Emitter Base Voltage (VEBO)
7V
Frequency
130MHz
Gain Bandwidth Product
130MHz
Height
1mm
hFE Min
100
Lead Free
Lead Free
Length
3.05mm
Max Breakdown Voltage
100V
Max Collector Current
4A
Max Frequency
130MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.56W
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
1.56W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
130MHz
DC Rated Voltage
100V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXTN2020FTA Datasheet
Download the complete datasheet for Diodes ZXTN2020FTA to view detailed technical specifications.
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