
NPN bipolar junction transistor (BJT) in a SOT-23 surface mount package. Features a 50V collector-emitter breakdown voltage, 5A continuous collector current, and 125MHz transition frequency. Offers a low collector-emitter saturation voltage of 170mV and a maximum power dissipation of 1.2W. Operates across a temperature range of -55°C to 150°C.
Diodes ZXTN2031FTA technical specifications.
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