NPN bipolar junction transistor (BJT) for small signal applications. Features a 60V collector-emitter breakdown voltage (VCEO) and a 1A maximum collector current (IC). Operates with a 150MHz transition frequency and a 500mV collector-emitter saturation voltage. Packaged in a lead-free SOT-23 surface-mount case, this silicon transistor is RoHS and REACH SVHC compliant.
Frequency150MHz
PackageSOT-23
Current Rating1A
MountingSurface Mount
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Technical Specifications
Diodes ZXTN2038FTA technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
500mV
Current Rating
1A
Emitter Base Voltage (VEBO)
5V
Frequency
150MHz
Gain Bandwidth Product
150MHz
Height
1mm
Lead Free
Lead Free
Length
3.05mm
Max Breakdown Voltage
60V
Max Collector Current
1A
Max Frequency
150MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
350mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
350mW
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
150MHz
DC Rated Voltage
80V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXTN2038FTA Datasheet
Download the complete datasheet for Diodes ZXTN2038FTA to view detailed technical specifications.
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