NPN silicon bipolar junction transistor designed for surface mount applications. Features a maximum collector current of 2.5A and a collector-emitter breakdown voltage of 100V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 4.46W. Packaged in a 3-pin SOT-89 (TO-243AA) case, this component offers a transition frequency of 175MHz.
PackageTO-243AA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes ZXTN25100DZTA technical specifications.
General
| Package/Case | TO-243AA |
| Collector Base Voltage (VCBO) | 180V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector-emitter Voltage-Max | 345mV |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 175MHz |
| Height | 1.6mm |
| Length | 4.6mm |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 2.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 4.46W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 175MHz |
| Weight | 0.001834oz |
| Width | 2.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXTN25100DZTA Datasheet
Download the complete datasheet for Diodes ZXTN25100DZTA to view detailed technical specifications.
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