NPN bipolar junction transistor (BJT) for small signal applications. Features a 200V collector-emitter breakdown voltage and 1A continuous collector current. Housed in a SOT-89 surface mount package, this silicon transistor operates from -55°C to 150°C with a maximum power dissipation of 1.5W. Lead-free and REACH SVHC compliant.
PackageSOT-89
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes ZXTN4006ZTA technical specifications.
General
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 200V |
| Collector Emitter Breakdown Voltage | 200V |
| Collector-emitter Voltage-Max | 200V |
| Continuous Collector Current | 1A |
| Emitter Base Voltage (VEBO) | 7V |
| Height | 1.6mm |
| Lead Free | Lead Free |
| Length | 4.6mm |
| Max Breakdown Voltage | 200V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Weight | 0.001834oz |
| Width | 2.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXTN4006ZTA Datasheet
Download the complete datasheet for Diodes ZXTN4006ZTA to view detailed technical specifications.
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