NPN bipolar junction transistor (BJT) for small signal applications. Features a 4A continuous collector current and a 50V collector-emitter breakdown voltage. Offers a 165MHz gain bandwidth product and a low 320mV collector-emitter saturation voltage. Packaged in a DFN2020B-3 surface-mount plastic package, this silicon transistor operates from -55°C to 150°C.
Frequency165MHz
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes ZXTN619MATA technical specifications.
General
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 320mV |
| Collector-emitter Voltage-Max | 320mV |
| Continuous Collector Current | 4A |
| Emitter Base Voltage (VEBO) | 7.5V |
| Gain Bandwidth Product | 165MHz |
| Height | 0.58mm |
| Lead Free | Lead Free |
| Length | 2.08mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 4A |
| Max Frequency | 165MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.45W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 165MHz |
| Width | 2.075mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXTN619MATA Datasheet
Download the complete datasheet for Diodes ZXTN619MATA to view detailed technical specifications.
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