
PNP Silicon Bipolar Junction Transistor (BJT) in a SOT-23F package. Features 120V Collector-Emitter Breakdown Voltage (VCEO) and 140V Collector-Base Voltage (VCBO). Offers a maximum continuous collector current of 1A and a transition frequency of 150MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2W. Surface mountable with lead-free and RoHS compliance.
Diodes ZXTP05120HFFTA technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 140V |
| Collector Emitter Breakdown Voltage | 120V |
| Collector Emitter Saturation Voltage | 900mV |
| Collector Emitter Voltage (VCEO) | 120V |
| Collector-emitter Voltage-Max | 2V |
| Continuous Collector Current | -1A |
| Emitter Base Voltage (VEBO) | -10V |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Breakdown Voltage | 120V |
| Max Collector Current | 1A |
| Max Frequency | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| Weight | 0.001721oz |
| Width | 1.7mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZXTP05120HFFTA to view detailed technical specifications.
No datasheet is available for this part.