
PNP Silicon Bipolar Junction Transistor for small signal applications. Features a maximum collector current of 5.5A and a collector-emitter breakdown voltage of 20V. Offers a collector-emitter saturation voltage of -44mV and a transition frequency of 176MHz. Packaged in a SOT-23-3 surface mount case, this component operates within a temperature range of -55°C to 150°C. It is RoHS and REACH SVHC compliant.
Diodes ZXTP19020DFFTA technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 25V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | -44mV |
| Collector-emitter Voltage-Max | 175mV |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 176MHz |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 5.5A |
| Max Frequency | 176MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 176MHz |
| Width | 1.7mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZXTP19020DFFTA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
