
PNP Silicon Bipolar Junction Transistor for surface mount applications. Features a maximum continuous collector current of -2A and a collector-emitter breakdown voltage of 100V. Offers a maximum power dissipation of 5.3W and a transition frequency of 142MHz. Packaged in a 4-pin SOT-223, this component is lead-free and RoHS compliant.
Diodes ZXTP19100CGTA technical specifications.
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | -110V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | -130mV |
| Collector-emitter Voltage-Max | 295mV |
| Continuous Collector Current | -2A |
| Emitter Base Voltage (VEBO) | -7V |
| Gain Bandwidth Product | 142MHz |
| Height | 1.65mm |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 2A |
| Max Frequency | 142MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 5.3W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 142MHz |
| Weight | 0.000282oz |
| Width | 3.7mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZXTP19100CGTA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.