
PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a maximum collector current of 2A and a collector-emitter breakdown voltage of 100V. Offers a transition frequency of 142MHz and a maximum power dissipation of 4.46W. Packaged in a 3-pin SOT-89, this lead-free component operates from -55°C to 150°C.
Diodes ZXTP19100CZTA technical specifications.
| Package/Case | SOT-89-3 |
| Collector Base Voltage (VCBO) | -110V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | -220mV |
| Collector-emitter Voltage-Max | 295mV |
| Emitter Base Voltage (VEBO) | -7V |
| Gain Bandwidth Product | 142MHz |
| Height | 1.6mm |
| Lead Free | Lead Free |
| Length | 4.6mm |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 2A |
| Max Frequency | 142MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 4.46W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 142MHz |
| Weight | 0.004603oz |
| Width | 2.6mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZXTP19100CZTA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.