PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a continuous collector current of -3.5A and a collector-emitter breakdown voltage of 20V. Offers a minimum DC current gain (hFE) of 300 and a transition frequency of 110MHz. Packaged in a 6-pin SOT-23 case, this component is RoHS and REACH SVHC compliant. Maximum power dissipation is 1.7W.
Frequency110MHz
PackageSOT-23-6
Current Rating-3.5A
MountingSurface Mount
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Technical Specifications
Diodes ZXTP2006E6TA technical specifications.
General
Package/Case
SOT-23-6
Collector Base Voltage (VCBO)
25V
Collector Emitter Breakdown Voltage
20V
Collector Emitter Saturation Voltage
-110mV
Collector Emitter Voltage (VCEO)
20V
Collector-emitter Voltage-Max
130mV
Continuous Collector Current
-3.5A
Current Rating
-3.5A
Emitter Base Voltage (VEBO)
7.5V
Frequency
110MHz
Gain Bandwidth Product
110MHz
Height
1.3mm
hFE Min
300
Lead Free
Lead Free
Length
3.1mm
Max Breakdown Voltage
20V
Max Collector Current
3.5A
Max Frequency
110MHz
Max Power Dissipation
1.1W
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
1.7W
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
110MHz
DC Rated Voltage
-20V
Weight
0.000529oz
Width
1.8mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXTP2006E6TA Datasheet
Download the complete datasheet for Diodes ZXTP2006E6TA to view detailed technical specifications.
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