PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a 140V Collector-Emitter Breakdown Voltage (VCEO) and a 3A Continuous Collector Current (IC). Offers a 120MHz Gain Bandwidth Product (fT) and a low Collector-Emitter Saturation Voltage (VCE(sat)) of -255mV. Packaged in a SOT-89 case, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 2.1W.
Frequency120MHz
PackageSOT-89
Current Rating-3A
MountingSurface Mount
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Technical Specifications
Diodes ZXTP2014ZTA technical specifications.
General
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 180V |
| Collector Emitter Breakdown Voltage | 140V |
| Collector Emitter Saturation Voltage | -255mV |
| Collector Emitter Voltage (VCEO) | 140V |
| Collector-emitter Voltage-Max | 330mV |
| Continuous Collector Current | -3A |
| Current Rating | -3A |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 120MHz |
| Gain Bandwidth Product | 120MHz |
| Height | 1.6mm |
| Lead Free | Lead Free |
| Length | 4.6mm |
| Max Breakdown Voltage | 140V |
| Max Collector Current | 3A |
| Max Frequency | 120MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 2.1W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 120MHz |
| DC Rated Voltage | -140V |
| Weight | 0.001834oz |
| Width | 2.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXTP2014ZTA Datasheet
Download the complete datasheet for Diodes ZXTP2014ZTA to view detailed technical specifications.
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