PNP Silicon Bipolar Junction Transistor (BJT) in a SOT-23 package. Features a 15V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 6A. Offers a typical collector-emitter saturation voltage of -190mV and a gain bandwidth product of 270MHz. Designed for surface mounting with a maximum power dissipation of 1.81W and operates across a temperature range of -55°C to 150°C. This component is RoHS and REACH SVHC compliant.
Frequency270MHz
PackageSOT-23
Current Rating-6A
MountingSurface Mount
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Technical Specifications
Diodes ZXTP23015CFHTA technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
15V
Collector Emitter Breakdown Voltage
15V
Collector Emitter Saturation Voltage
-190mV
Collector Emitter Voltage (VCEO)
15V
Collector-emitter Voltage-Max
190mV
Current Rating
-6A
Emitter Base Voltage (VEBO)
7V
Frequency
270MHz
Gain Bandwidth Product
270MHz
Height
1mm
Lead Free
Lead Free
Length
3.05mm
Max Breakdown Voltage
15V
Max Collector Current
6A
Max Frequency
270MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.81W
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
1.81W
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
270MHz
DC Rated Voltage
-15V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXTP23015CFHTA Datasheet
Download the complete datasheet for Diodes ZXTP23015CFHTA to view detailed technical specifications.
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