
PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a 3A continuous collector current and 40V collector-emitter breakdown voltage. Offers a 270MHz transition frequency and a low -350mV collector-emitter saturation voltage. Packaged in a SOT-89 case, this component operates from -55°C to 150°C and is RoHS compliant.
Diodes ZXTP25040DZTA technical specifications.
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 45V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | -350mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 350mV |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 270MHz |
| Gain Bandwidth Product | 270MHz |
| Height | 1.6mm |
| Lead Free | Lead Free |
| Length | 4.6mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 3A |
| Max Frequency | 270MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 4.46W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 4.46W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 270MHz |
| Weight | 0.001834oz |
| Width | 2.6mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZXTP25040DZTA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
