PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a maximum collector current of 1.25A and a collector-emitter breakdown voltage of 12V. Operates with a transition frequency of 220MHz and a maximum power dissipation of 885mW. Packaged in a SOT-23-6 surface mount configuration, this RoHS compliant component is supplied on tape and reel.
PackageSOT-23-6
Current Rating-1.25A
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes ZXTS1000E6TA technical specifications.
General
| Package/Case | SOT-23-6 |
| Collector Base Voltage (VCBO) | 12V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector-emitter Voltage-Max | 240mV |
| Current Rating | -1.25A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 220MHz |
| Height | 1.3mm |
| Lead Free | Contains Lead |
| Length | 3.1mm |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 1.25A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 885mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 220MHz |
| DC Rated Voltage | -12V |
| Weight | 0.000529oz |
| Width | 1.8mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXTS1000E6TA Datasheet
Download the complete datasheet for Diodes ZXTS1000E6TA to view detailed technical specifications.
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