2N5401

This PNP silicon bipolar transistor is supplied as a single device in a TO-92 wire-lead package. It is rated for 150 V collector-emitter voltage, 600 mA DC collector current, and 0.625 W power dissipation. The maximum junction temperature is 150 °C. The manufacturer lists a DC current gain of 60 at VCE = 5 V and IC = 10 mA, a collector saturation voltage of 500 mV at IC = 50 mA and IB = 5 mA, and a 100 MHz gain-bandwidth product. RoHS and REACH compliant status is shown on the product page.